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| LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G 3 1 Ordering Information Device LMBT6520LT1G LMBT6520LT3G Marking 2Z 2Z Shipping 3000/Tape&Reel 10000/Tape&Reel 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current -- Continuous Symbol V CEO V CBO V EBO SOT-23 Value -350 -350 -5.0 -250 -500 Unit Vdc Vdc Vdc mA mAdc 2 EMITTER 3 COLLECTOR 1 BASE IB IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING LMBT6520LT1G = 2Z ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = -1.0 mA ) Collector-Base Breakdown Voltage(I E = -100 A ) Emitter-Base Breakdown Voltage(I E = -10 A) Collector Cutoff Current( V CB = -250V ) Emitter Cutoff Current( V EB = -4.0V ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO -350 -350 -5.0 -- -- -- -- -- -50 -50 Vdc Vdc Vdc nA nA 1/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 30 30 20 15 VCE(sat) -- -- -- -- VBE(sat) -- -- -- V BE(on) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10mAdc, V CE = -10 Vdc) (I C = -30 mAdc, V CE = -10 Vdc) (I C = -50 mAdc, V CE = -10 Vdc) (I C = -100 mAdc, V CE = -10 Vdc) Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) (I C = -20 mAdc, I B = -2.0 mAdc) (I C = -30 mAdc, I B = -3.0mAdc) (I C = -50 mAdc, I B = -5.0 mAdc) Base - Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc,) (I C = -20mAdc, I B = -2.0mAdc,) (I C = -30mAdc, I B = -3.0mAdc,) Base-Emitter On Voltage (I C = -100mAdc, V CE = -10V ) -- -- 200 200 -- Vdc -0.30 -0.35 -0.50 -1.0 Vdc -0.75 -0.85 -0.90 -2.0 Vdc -- SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (V CE = -20 V, I C = -10mA, f = 20 MHz) Collector -Base Capacitance (V CB = -20 V, f = 1.0 MHz) Emitter -Base Capacitance (V EB= -0.5 V, f = 1.0 MHz) fT C C cb 40 -- -- 200 6.0 100 MHz pF pF eb 2/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G V CE = 10 V T J = 125C f T , CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 200 100 h FE , DC CURRENT GAIN 100 70 50 25C 70 50 -55C 30 20 30 T J = 25C V CE = 20 V f = 20 MHz 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current-Gain -- Bandwidth Product R V , TEMPERATURE COEFFICIENTS (mV/ C) 1.4 2.5 2.0 1.5 1.0 0.5 0 T J = 25C 1.2 IC IB = 10 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 25C to 125C R VC for V CE(sat) -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on) @ V CE = 10 V -0.5 -1.0 -55C to 125C R VBfor V BE -1.5 -2.0 -2.5 1.0 V CE(sat) @ I C /I B = 10 V CE(sat) @ I C /I B = 5.0 30 50 70 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. "On" Voltages Figure 4. Temperature Coefficients 1.0k 100 70 50 T J = 25C C eb 700 500 300 200 V CE(off) = 100 V t d @ V BE(off) = 2.0 V I C /I B = 5.0 T J = 25C C, CAPACITANCE (pF) 30 20 tr t, TIME (ns) 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 C cb V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Turn-On Time 3/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G 10k 7.0k 5.0k 3.0k 2.0k 1.0k 700 500 300 200 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 tS t, TIME (ns) tr V CE(off) = 100 V I C /I B = 5.0 I B1 = I B2 T J = 25C I C , COLLECTOR CURRENT (mA) Figure 7. Turn-On Time +V CC V CC ADJUSTED FOR V CE(off) = 100 V 2.2 k 50 SAMPLING SCOPE 20 k 1.0 k -9.2 V 1/2MSD7000 50 +10.8 V PULSE WIDTH ~ 100 ms ~ t r , t f <5.0 ns DUTY CYCLE <1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES APPROXIMATELY -1.35 V (ADJUST FOR V (BE)off = 2.0 V) Figure 8. Switching Time Test Circuit 1.0 RESISTANCE (NORMALIZED) 0.7 0.5 0.3 0.2 D = 0.5 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.05 SINGLE PULSE SINGLE PULSE Z qJC(t) = r(t) * R qJC T J(pk) - T C = P (pk) Z qJC(t) Z qJA(t) = r(t) * R qJA T J(pk) - T A = P (pk) Z qJA(t) 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 t, TIME (ms) Figure 9. Thermal Response 4/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G FIGURE A t P PP PP t 1 1/f tP PEAK PULSE POWER = P P DUTY CYCLE =t 1 f = t1 Design Note: Use of Transient Thermal Resistance Data 5/6 LESHAN RADIO COMPANY, LTD. LMBT6520LT1G SOT-23 NOTES: A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 6/6 |
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